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MB84VD21081

16M (×8/×16) FLASH MEMORY & 2M (×8/×16) STATIC RAM

Spansion Inc. 

MB84VD2108XEM/2109XEM-70

s ELECTRICAL CHARACTERISTICS

1. DC Characteristics

Parameter

Symbol

Test Conditions

Input Leakage Current

Output Leakage Current

RESET Inputs Leakage

Current

Flash VCC Active Current

(Read) *1

Flash VCC Active Current

(Program/Erase) *2

Flash VCC Active Current

(Read-While-Program) *5

Flash VCC Active Current

(Read-While-Erase) *5

Flash VCC Active Current

(Erase-Suspend-Program)

ACC Input Leakage

Current

SRAM VCC Active Current

SRAM VCC Active Current

Flash VCC Standby Current

Flash VCC Standby Current

(RESET)

Flash VCC Current

(Automatic Sleep Mode) *3

ILI

ILO

ILIT

ICC1f

VIN = VSS to VCCf, VCCs

VOUT = VSS to VCCf, VCCs

VCCf = VCCf Max, VCCs = VCCs Max,

RESET = 12.5 V

tCYCLE = 5 MHz Byte

CEf = VIL,

OE = VIH

tCYCLE = 5 MHz Word

tCYCLE = 1 MHz Byte

tCYCLE = 1 MHz Word

ICC2f CEf = VIL, OE = VIH

ICC3f CEf = VIL, OE = VIH

ICC4f CEf = VIL, OE = VIH

Byte

Word

Byte

Word

ICC5f CEf = VIL, OE = VIH

ILIA

ICC1s

ICC2s

ISB1f

ISB2f

ISB3f

VCCf = VCCf Max, VCCs = VCCs Max,

WP/ACC = VACC Max

VCCs = VCCs Max,

CE1s = VIL,

CE2s = VIH

tCYCLE =10 MHz

CE1s = 0.2 V,

tCYCLE = 10 MHz

CE2s = VCCs – 0.2 V tCYCLE = 1 MHz

VCCf = VCCf Max, CEf = VCCf ± 0.3 V

RESET = VCCf ± 0.3 V,

WP/ACC = VCCf± 0.3 V

VCCf = VCCf Max, RESET = VSS ± 0.3 V,

WP/ACC = VCCf± 0.3 V

VCCf = VCCf Max, CEf = VSS ± 0.3 V

RESET = VCCf ± 0.3 V,

WP/ACC = VCCf± 0.3 V

VIN = VCCf± 0.3 V or VSS ± 0.3 V

Min

–1.0

–1.0

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Value

Typ

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—

—

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1

1

1

Unit

Max

+1.0 µA

+1.0 µA

35 µA

13

mA

15

7

mA

7

35 mA

48

mA

50

48

mA

50

35 mA

20 mA

40 mA

40 mA

8 mA

5 µA

5 µA

5 µA

(Continued)

10

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