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MB110F Просмотр технического описания (PDF) - HY ELECTRONIC CORP.

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Компоненты Описание
Список матч
MB110F
HY
HY ELECTRONIC CORP. HY
MB110F Datasheet PDF : 3 Pages
1 2 3
MB105F thru MB110F
GLASS PASSIVATED
BRIDGE RECTIFIERS
FEATURES
Glass passivated die construction
Low forward voltage drop
High current capability
High surge current capability
Designed for surface mount application
Plastic material-UL flammability 94V-0
REVERSE VOLTAGE - 50 to 1000 Volts
FORWARD CURRENT - 1 Ampere
MBF
.008(0.2)
MECHANICAL DATA
Case: MB-F, molded plastic
Terminals: plated leads solderable per MIL-STD-202,
.032(0.8)
.020(0.5)
.014(0.35)
.006(0.15)
.043(1.1)
.028(0.7)
Method 208
Polarity: as marked on case
Mounting position :Any
Marking: type number
Lead Free: For RoHS / Lead Free Version
.106(2.7)
.090(2.3)
.195(4.95)
.177(4.50)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current (Note 1)
@TA=40
Peak Forward Surge Current
8.3ms Single Half Sine-Wave
Super Imposed on Rated Load(JEDEC Method)
Peak Forward Voltage at 1A DC
Maximum DC Reverse Current
@TJ=25
at Rated DC Bolcking Voltage
@TJ=125
Typical Junction Capacitance Per Element (Note2)
Typical Thermal Resistance (Note3)
Operating Temperature Range
Storage Temperature Range
SYMBOL MB105F MB11F
VRRM
50
100
VRMS
35
70
VDC
50
100
MB12F
200
140
200
MB14F
400
280
400
MB16F
600
420
600
MB18F MB110F
800
1000
560
700
800
1000
I(AV)
1.0
IFSM
VF
IR
CJ
RθJA
RθJL
TJ
TSTG
35
1.1
5.0
500
25
60
16
-55 to +150
-55 to +150
NOTES:1.Mounted on P.C. board.
2.Measured at1.0MHz and applied reverse voltage of 4.0V DC.
3.Thermal resistance junction to case.
4.The typical data above is for reference only(典型值仅供参考).
UNIT
V
V
V
A
A
V
μA
pF
/W
Rev. 2, 16-Mar-2017

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