MAS9275 Просмотр технического описания (PDF) - Micro Analog Systems Oy
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MAS9275 Datasheet PDF : 10 Pages
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DA9275.004
23 April 2003
PIN DESCRIPTION
Pin Description
Symbol
x-coordinate
y-coordinate
Note
Crystal/Varactor Oscillator Input
Voltage Control Input
Power Supply Ground
Buffer Output
Power Supply Voltage
X1
VC
VSS
OUT
VDD
209
425
600
1029
841
161
165
175
1030
1016
Tri State
Crystal Oscillator Output
PD
379
X2
197
1028
1030
Note: Because the substrate of the die is internally connected to GND, the die has to be connected to GND or
left floating. Please make sure that GND is the first pad to be bonded. Pick-and-place and all component
assembly are recommended to be performed in ESD protected area.
Note: Pad coordinates are measured from the left bottom corner of the chip to the center of the pads. The
coordinates may vary depending on sawing width and location, however, distances between pads are accurate.
ABSOLUTE MAXIMUM RATINGS
Parameter
Supply Voltage
Input Pin Voltage
Power Dissipation
Storage Temperature
Symbol
VDD - VSS
PMAX
TST
Min
-0.3
VSS -0.3
-40
Max
6.0
VDD + 0.3
100
120
Unit
V
V
mW
oC
Note
RECOMMENDED OPERATION CONDITIONS
Parameter
Supply Voltage
Supply Current
Operating Temperature
Storage Temperature
Crystal Pulling Sensitivity
Crystal Load Capacitance
Symbol
Conditions
Min
VDD
2.5
IDD
VDD = 2.8 V
TOP
-30
TS
Relative humidity = -5
15%…70%
S
CL
VC = 1.65 V
Typ Max
2.8
5.5
2.3
+85
+40
Unit
V
mA
oC
oC
Note
1)
30
ppm/pF
10
pF
2)
Note 1: When using the device at VDD ≥ 5 V, we recommend connecting a 1 nF capacitor to the VDD pin.
Note 2: MAS9275A1 has a typical crystal load capacitance of 8.0 pF.
MAS9275B2 has a typical crystal load capacitance of 10 pF.
MAS9275B3 has a typical crystal load capacitance of 12 pF.
2 (10)
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