JANTXV2N6788(1996) Просмотр технического описания (PDF) - International Rectifier
Номер в каталоге
Компоненты Описание
Список матч
JANTXV2N6788 Datasheet PDF : 6 Pages
| |||
Provisional Data Sheet No. PD-9.426B
JANTX2N6788
HEXFET® POWER MOSFET
JANTXV2N6788
[REF:MIL-PRF-19500/555]
[GENERIC:IRFF120]
N-CHANNEL
100 Volt, 0.30Ω HEXFET
HEXFET technology is the key to International
Rectifier’s advanced line of power MOSFET transis-
tors. The efficient geometry achieves very low on-
state resistance combined with high transconductance.
HEXFET transistors also feature all of the well-es-
tablish advantages of MOSFETs, such as voltage
control, very fast switching, ease of paralleling and
electrical parameter temperature stability. They are
well-suited for applications such as switching power
supplies, motor controls, inverters, choppers, audio
amplifiers, and high energy pulse circuits, and virtu-
ally any application where high reliability is required.
Product Summary
Part Number
BVDSS
JANTX2N6788
JANTXV2N6788
100V
Features:
s Avalanche Energy Rating
s Dynamic dv/dt Rating
s Simple Drive Requirements
s Ease of Paralleling
s Hermetically Sealed
RDS(on)
0.30Ω
ID
6.0A
Absolute Maximum Ratings
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
VGS
dv/dt
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
JANTX2N6788, JANTXV2N6788 Units
6.0
3.5
A
24
20
W
0.16
W/K
±20
V
5.5
V/ns
-55 to 150
300 (0.063 in. (1.6mm) from oC
case for 10.5 seconds)
0.98 (typical)
g
Share Link: 