2N6784E3 Просмотр технического описания (PDF) - Microsemi Corporation
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2N6784E3 Datasheet PDF : 9 Pages
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2N6782, 2N6784 and 2N6786
ELECTRICAL CHARACTERISTICS @ TA = +25 °C, unless otherwise noted
Parameters / Test Conditions
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 1.0 mA
Gate-Source Voltage (Threshold)
VDS ≥ VGS, ID = 0.25 mA
VDS ≥ VGS, ID = 0.25 mA, TJ = +125 °C
VDS ≥ VGS, ID = 0.25 mA, TJ = -55 °C
Gate Current
VGS = ± 20 V, VDS = 0 V
VGS = ± 20 V, VDS = 0 V, TJ = +125 °C
Drain Current
VGS = 0 V, VDS = 80 V
VGS = 0 V, VDS = 160 V
VGS = 0 V, VDS = 320 V
Drain Current
VGS = 0 V, VDS = 80 V, TJ = +125 °C
VGS = 0 V, VDS = 160 V, TJ = +125 °C
VGS = 0 V, VDS = 320 V, TJ = +125 °C
Static Drain-Source On-State Resistance
VGS = 10 V, ID = 2.25 A pulsed
VGS = 10 V, ID = 1.50 A pulsed
VGS = 10 V, ID = 0.80 A pulsed
Static Drain-Source On-State Resistance
VGS = 10 V, ID = 3.50 A pulsed
VGS = 10 V, ID = 2.25 A pulsed
VGS = 10 V, ID = 1.25 A pulsed
Static Drain-Source On-State Resistance
TJ = +125 °C
VGS = 10 V, ID = 2.25 A pulsed
VGS = 10 V, ID = 1.50 A pulsed
VGS = 10 V, ID = 0.80 A pulsed
Diode Forward Voltage
VGS = 0 V, ID = 3.50 A pulsed
VGS = 0 V, ID = 2.25 A pulsed
VGS = 0 V, ID = 1.25 A pulsed
Symbol Min. Max.
2N6782
100
2N6784 V(BR)DSS 200
2N6786
400
V GS(th)1
2.0
4.0
V GS(th)2
1.0
V GS(th)3
5.0
I GSS1
I GSS2
±100
±200
2N6782
2N6784
I DSS1
25
2N6786
2N6782
2N6784
2N6786
I DSS2
0.25
2N6782
2N6784
2N6786
r DS(on)1
0.60
1.50
3.60
2N6782
2N6784
2N6786
r DS(on)2
0.61
1.60
3.70
2N6782
2N6784
2N6786
r DS(on)3
2N6782
2N6784
V SD
2N6786
1.08
2.81
7.92
1.5
1.5
1.4
Unit
V
V
nA
µA
mA
Ω
Ω
Ω
V
T4-LDS-0064, Rev. 3 (121467)
©2012 Microsemi Corporation
Page 3 of 9
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