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2N3810DCSM

SILICON DUAL MATCHED PNP TRANSISTORS

TT Electronics. 

SILICON DUAL MATCHED

PNP TRANSISTORS

2N3810DCSM

• Matched Dual Transistor.

• Dual Ceramic Hermetic Package

• Suitable For High Gain, Low Noise, Differential Amplifier,

Applications.

• Screening Options Available

ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)

Each Side Total Device

VCBO

Collector – Base Voltage

-60V

VCEO

Collector – Emitter Voltage

-60V

VEBO

Emitter – Base Voltage

-5V

IC

Continuous Collector Current

-50mA

PD

Total Power Dissipation at TA = 25°C

500mW

600mW(1)

Derate Above 25°C 2.86mW/°C 3.43mW/°C

TJ

Junction Temperature Range

-65 to +200°C

Tstg

Storage Temperature Range

-65 to +200°C

THERMAL PROPERTIES (Each Side)

Symbols Parameters

RθJA

Thermal Resistance, Junction To Ambient

Min. 1Typ. Max. Units

350 °C/W

Notes

(1) Total device power dissipation limited by package.

Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.

Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However

Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to

verify that datasheets are current before placing orders.

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com

Website: http://www.semelab-tt.com

Document Number 2873

Issue 2

Page 1 of 4

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