BSX46 Просмотр технического описания (PDF) - New Jersey Semiconductor
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BSX46 Datasheet PDF : 4 Pages
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NPN medium powertransistors
BSX45; BSX46; BSX47
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
BSX45; BSX46
ICBQ
collector cut-off current
BSX47
IEBO
hpE
hpE
hpE
hpE
VcEsat
VcEsat
VBE
emitter cut-off current
DC current gain
BSX45-10; BSX46-10; BSX47-10
BSX45-16; BSX46-16
DC current gain
BSX45-10; BSX46-10; BSX47-10
BSX45-16; BSX46-16; BSX47-16
DC current gain
BSX45-10; BSX46-10; BSX47-10
BSX45-16;BSX46-16
DC current gain
BSX45-10; BSX46-10; BSX47-10
BSX45-16;BSX46-16
collector-emitter saturation voltage
BSX45; BSX46
collector-emitter saturation voltage
BSX47
base-emitter voltage
Cc
collector capacitance
BSX45
BSX46
BSX47
ce
emitter capacitance
fr
transition frequency
F
noise figure
CONDITIONS
MIN. TYP. MAX. UNIT
IE = 0; VCB = 60 V
_
30 nA
lE = 0;VCB = 60V;Tamb=150°C
-
-
10 MA
IE = 0; VCB = 80 V
_
30 nA
lE = 0;VCB = 80V;Tamb=150°
lc = 0; VEB = 5 V
-
-
10 MA
_
-
10 nA
lc = 100uA;VCE = 1 V
15 40 -
25 90
lc = 100mA; VCE = 1V
63 100 160
100 160 250
lc = 500 mA; VCE = 1V
25 40 -
35 60
lc = 1 A; VCE = 1 V
-
20 -
30
lc= 1A; IB= 100mA
_
1
V
lc = 500 mA; IB = 25 mA
900 mV
lc= 100mA; VCE = 1 V
lc = 500 mA;VCE = 1V
-
-
0.75 -
1
V
1.5 V
lc = 1A; VCE = 1V
-
-
2
V
lE = ie= 0;VCB = 1 0 V ; f = 1 MHz
25 PF
-
-
20 PF
15 pF
lc = ic= 0;VEB = 0 . 5 V ; f = 1 MHz -
-
80 PF
lc = 50 mA; VCE = 10 V; f = 100 MHz 50 -
-
MHz
lc = 100nA; VCE = 5 V; Rs = 1 kii; -
3.5 -
dB
f = 1 kHz; B = 200 Hz
Switching times (between 10% and 90% levels)
ton
turn-on time
toff
turn-off time
lcon = 100 mA; lBon = 5 mA;
Isoff = -5 mA
-
-
200 ns
-
-
850 ns
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