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TIPL790

NPN SILICON POWER DARLINGTONS

Power Innovations 

TIPL790, TIPL790A

NPN SILICON POWER DARLINGTONS

AUGUST 1978 - REVISED MARCH 1997

electrical characteristics at 25°C case temperature (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN TYP MAX UNIT

Collector-emitter

TIPL790

120

VCEO(sus) sustaining voltage

IC = 100 mA

L = 25 mH

(see Note 2)

TIPL790A

150

V

Collector-base

TIPL790

150

VCBO breakdown voltage

IC = 1 mA

(see Note 3)

TIPL790A

200

V

Collector-emitter

ICES cut-off current

ICEV

ICEO

IEBO

Collector cut-off

current

Collector cut-off

current

Emitter cut-off

current

VCE = 150 V

VCE = 200 V

VCE = 150 V

VCE = 200 V

VCE = 150 V

VCE = 200 V

VCE = 120 V

VCE = 150 V

VEB = 5 V

VBE = 0

VBE = 0

VBE = 0

VBE = 0

TC = 100°C

TC = 100°C

1.5 < VEB <8 V

IB = 0

IB = 0

IC = 0

TIPL790

TIPL790A

TIPL790

TIPL790A

TIPL790

TIPL790A

TIPL790

TIPL790A

0.05

0.05

mA

1

1

50

µA

50

50

µA

50

4

mA

Forward current

hFE

transfer ratio

VCE = 5 V IC = 0.5 A

(see Notes 3 and 4)

60

500

Collector-emitter

VCE(sat) saturation voltage

Base-emitter

VBE(sat) saturation voltage

Parallel diode

VEC

forward voltage

IB = 20 mA

IB = 30 mA

IB = 50 mA

IB = 50 mA

IB = 20 mA

IB = 30 mA

IB = 50 mA

IB = 50 mA

IE = 10 A

IC = 4 A

IC = 7 A

IC = 10 A

IC = 10 A

IC = 4 A

IC = 7 A

IC = 10 A

IC = 10 A

IB = 0

(see Notes 3 and 4)

TC = 100°C

(see Notes 3 and 4)

TC = 100°C

1.2

1.5

V

2.0

2.0

1.8

1.9

V

2.2

2.1

3

V

Current gain

ft

bandwidth product

VCE = 10 V IC = 0.5 A

f = 1 MHz

(see Note 5)

10

MHz

Cob Output capacitance VCB = 20 V IE = 0

f = 0.1 MHz

90

pF

NOTES: 2. Inductive loop switching measurement.

3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.

4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

5. To obtain ft the [hFE] response is extrapolated at the rate of -6 dB per octave from f = 1 MHz to the frequency at which [hFE] = 1.

thermal characteristics

RθJC

PARAMETER

Junction to case thermal resistance

MIN TYP MAX UNIT

1.79 °C/W

inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted)

PARAMETER

TEST CONDITIONS †

MIN

tsi

Current storage time

trv

Voltage rise time

tfi

Current fall time

tti

Current tail time

IC = 10 A

IB(off) = -2.5 A

txo

Cross over time

IB(on) = 50 mA

VBE(off) = -5 V

(see Figures 1 and 2)

† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

TYP MAX

450 700

160 750

250 400

280 450

320 500

UNIT

ns

ns

ns

ns

ns

PRODUCT INFORMATION

2

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