BAP51-03 Просмотр технического описания (PDF) - NXP Semiconductors.
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BAP51-03 Datasheet PDF : 9 Pages
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NXP Semiconductors
BAP51-03
Silicon PIN diode
8 Graphical data
500
Cd
(fF)
400
300
aaa-029896
10
rD
(Ω)
5
aaa-029895
200
2
100
0
0
4
8
12
16
20
VR (V)
Tj = 25 °C; f = 1 MHz
Figure 1. Diode capacitance as a function of reverse
voltage (typical values)
1
10-1
1
10
IF (mA)
Tj = 25 °C; f = 100 MHz.
Figure 2. Diode forward resistance as a function of
forward current (typical values)
0
Lins
(dB)
-0.5
-1
aaa-029908
(1)
(2)
(3)
0
ISL
(dB)
-5
-10
aaa-029909
-1.5
-15
-2
-20
-2.5
0.5
1
1.5
2
2.5
3
f (GHz)
Diode inserted in series with a 50 Ω strip line circuit and
biased via the analyzer T-network; Tamb = 25 °C
(1) IF = 10 mA
(2) IF = 1 mA
(3) IF = 0.5 mA
Figure 3. Insertion loss of the diode as a function of
frequency (typical values)
-25
0.5
1
1.5
2
2.5
3
f (GHz)
Diode zero-biased and inserted in series with a 50 Ω
strip line circuit and biased via the analyzer T-network;
Tamb = 25 °C; f = 100 MHz
Figure 4. Isolation of the diode as a function of
frequency (typical values)
BAP51-03
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5.1 — 8 February 2019
© NXP B.V. 2019. All rights reserved.
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