UT51C164JC-25 Просмотр технического описания (PDF) - Utron Technology Inc

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UT51C164JC-25

256K X 16 BIT EDO DRAM

Utron Technology Inc 



UTRON

Rev 1.5

UT51C164

256K X 16 BIT EDO DRAM

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

VALUE

Voltage on any pin relative to Vss

VT

-1.0 to +7

Supply voltage relative to VSS

VDD

-1.0 to +7

Short circuit output current

IOUT

50

Power dissipation

PD

1.0

Operating temperature

TA

0 to + 70

Storage temperature

TSTG

-55 to +125

Notes: Permanent device damage may occur if absolute maximum ratings are exceed.

UNIT

V

V

mA

W

ºC

ºC

RECOMMENDED DC OPERATING CONDITIONS (TA = 0℃ to 70ºC)

PARAMETER

SYMBOL

Supply voltage

Input high voltage

Input low voltage

Notes: 1. All Voltage referred to Vss

VDD

Vss

VIH

VIL

5.0V

MIN

MAX

4.5

5.5

0

0

2.4

VDD +1V

-0.3

0.8

UNIT

V

V

V

V

NOTES

1

-

1

1

CAPACITANCE (TA = 25ºC, VDD= 5V±0.5V，f=1MHz)

PARAMETER

SYMBOL

TYP

Input capacitance (A0-A8)

Input Capacitance

CIN1

3

CIN2

4

( RAS , UCAS , LCAS , WE , OE )

Output capacitance(DQ0-DQ15)

CDQ

5

MAX

4

5

7

UNIT

pF

pF

pF

UTRON TECHNOLOGY INC.

1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.

TEL: 886-3-5777882 FAX: 886-3-5777919

5

P90005

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