UM9441 Просмотр технического описания (PDF) - Microsemi Corporation
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UM9441 Datasheet PDF : 4 Pages
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UM9441
PIN RADIATION DETECTORS
DESCRIPTION
Description
temperature so long as applied voltage
Silicon PIN devices are effective
exceeds the saturation voltage. This
detectors of nuclear and
structure also minimizes the effects of
electromagnetic radiation. This includes permanent damage caused by neutrons and
gamma radiation, electrons, and X-rays. other high energy radiation. Experiments on
The detectors can be used across the devices of the UM9441 design show no
temperature range of -55 oC to +175 oC degradation in gamma sensitivity resulting
instead of being restricted to use at low from a total dose of 1014 neutrons/cm2 of
temperatures.
1 MeV equivalent.
The absorbed radiation produces
Package
electron-hole pairs in the space charge The UM9441 is an axially leaded device
region. These charges are swept out by constructed by metallurgically bonding the
the applied field and result in a current PIN chip in between two molybdenum
flow proportional to the rate of
refractory pins that are typically 0.125
absorbed radiation.
inches in diameter and 0.050 inches long.
The Microsemi UM9441 series
Hyper-pure glass is then fused over this
utilizes high resistivity material and is bond to form a void less seal. Leads are then
designed to have a uniform area mesa brazed to ends of molybdenum pins. This
structure to define the active volume. results in a high-reliability package using
The current sensitivity of this device is materials so well thermally matched that the
proportional only to the I-region
volume and is independent of
UM9441 can withstand temperature shock
or cycling from -196 oC to +300 oC.
IMPORTANT: Forthemostcurrentdata,consultMICROSEMI’s website: http://www.microsemi.com
ABSOLUTE MAXIMUM RATINGS AT 25º C
(UNLESS OTHERWISE SPECIFIED)
Rating
Symbol
Value
Unit
Reverse Voltage
Photocurrent
Storage Temperature
Operating Temperature
VR
T stg
T op
100
3Adc
V
3A2s pulsed
-55 to +200
ºC
-55 to +175
ºC
KEY FEATURES
High Photocurrent Sensitivity
High Reliability Construction
Fast Rise Time
Wide Dynamic Range
Hardness to Neutron
Bombardment
Low operating Voltage
APPLICATIONS/BENEFITS
Surface Mount package available
RoHS compliant devices
available
Copyright 2006
Rev. 0, 2006-03-14
Microsemi
Page 1
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