DT651D(1998) Просмотр технического описания (PDF) - STMicroelectronics
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DT651D Datasheet PDF : 6 Pages
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1 - PARAMETERS RELATED TO DIODE LINE / GND
Symbol
Test conditions
VF
IF = 1 A
tp = 100 µs
VFP
see curve fig. 1
NA : Non Available
THDT6511D
Min. Typ. Max. Unit
2
V
NA
NA
NA
V
2 - PARAMETERS RELATED TO PROTECTION THYRISTOR
Symbol
VBR
VBO
IRM
IBO
IBO
IH
αT
C
dV/dt
IR = 1mA
Tests conditions
VRM = 63 V
tp = 100 µs
F = 50 Hz
RG = 600 Ω
VD = 100 mVRMS
F = 1KHz
Linear ramp up to 67 % of VBR
Min.
65
68
110
150
5
Typ. Max. Unit
V
85
V
100
µA
450
mA
500
mA
mA
15
10-4/°C
500
pF
kV / µs
3/6
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