ITK13A65D Просмотр технического описания (PDF) - Inchange Semiconductor

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Компоненты Описание

производитель

ITK13A65D

N-Channel MOSFET Transistor

Inchange Semiconductor 

iscN-Channel MOSFET Transistor

INCHANGE Semiconductor

TK13A65D，ITK13A65D

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

BVDSS

Drain-Source Breakdown Voltage VGS=0V; ID= 10mA

VGS(th)

Gate Threshold Voltage

VDS= 10V; ID=1.0mA

RDS(on)

Drain-Source On-Resistance

VGS=10V; ID=6.5A

IGSS

Gate-Source Leakage Current

VGS= ±30V;VDS= 0V

IDSS

Drain-Source Leakage Current VDS=650V; VGS= 0V

VSDF

Diode forward voltage

IDR =13A, VGS = 0 V

MIN TYP MAX UNIT

650

V

2.0

4.0

V

400 470 mΩ

±1 μA

10

μA

1.7

V

isc website：www.iscsemi.cn

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