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TK13A65D Просмотр технического описания (PDF) - Inchange Semiconductor

Номер в каталоге
Компоненты Описание
производитель
TK13A65D
Iscsemi
Inchange Semiconductor Iscsemi
TK13A65D Datasheet PDF : 2 Pages
1 2
iscN-Channel MOSFET Transistor
INCHANGE Semiconductor
TK13A65DITK13A65D
·FEATURES
·Low drain-source on-resistance:
RDS(on) = 0.4(typ.)
·Enhancement mode:
Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Switching Voltage Regulators
·ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
650
VGS
Gate-Source Voltage
±30
ID
Drain Current-Continuous
13
IDM
Drain Current-Single Pulsed
52
PD
Total Dissipation @TC=25
50
Tj
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT
V
V
A
A
W
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX
2.5
62.5
UNIT
/W
/W
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