IRF7480MTR1PBF Просмотр технического описания (PDF) - Infineon Technologies

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IRF7480MTR1PBF

DirectFET® N-Channel Power MOSFET

Infineon Technologies 

1000

100

10

4.5V

TOP

BOTTOM

VGS

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

1000

100

IRF7480MTRPbF

TOP

BOTTOM

VGS

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

4.5V

1

0.1

60µs PULSE WIDTH

Tj = 25°C

1

10

100

VDS, Drain-to-Source Voltage (V)

Fig 3. Typical Output Characteristics

1000

100

TJ = 150°C

TJ = 25°C

10

VDS = 10V

60µs PULSE WIDTH

1.0

2

3

4

5

6

7

8

VGS, Gate-to-Source Voltage (V)

Fig 5. Typical Transfer Characteristics

100000

10000

1000

VGS = 0V, f = 1 MHZ

Ciss = Cgs + Cgd, Cds SHORTED

Crss = Cgd

Coss = Cds + Cgd

Ciss

Coss

Crss

100

1

10

100

VDS, Drain-to-Source Voltage (V)

Fig 7. Typical Capacitance vs. Drain-to-Source Voltage

4

10

0.1

60µs PULSE WIDTH

Tj = 150°C

1

10

100

VDS, Drain-to-Source Voltage (V)

Fig 4. Typical Output Characteristics

1.8

ID = 132A

1.6 VGS = 10V

1.4

1.2

1.0

0.8

0.6

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature (°C)

Fig 6. Normalized On-Resistance vs. Temperature

14.0

ID= 132A

12.0

VDS= 32V

10.0

VDS= 20V

8.0

6.0

4.0

2.0

0.0

0

20 40 60 80 100 120 140 160

QG, Total Gate Charge (nC)

Fig 8. Typical Gate Charge vs. Gate-to-Source Voltage

2016-5-4

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