IRFD9220 Просмотр технического описания (PDF) - Intersil
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IRFD9220 Datasheet PDF : 6 Pages
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IRFD9220
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
IRFD9220
-200
-200
-0.6
-4.8
±20
1.0
0.008
290
-55 to 150
300
260
UNITS
V
V
A
A
V
W
W/oC
mJ
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
Gate to Source Leakage Current
On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
Internal Source Inductance
BVDSS ID = -250µA, VGS = 0V, (Figure 9)
-200 -
-
V
VGS(TH) VGS = VDS, ID = -250µA
-2.0 - -4.0 V
IDSS VDS = Rated BVDSS, VGS = 0V
-
-
-25
µA
VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC
-
- -250 µA
ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = -10V
-0.6 -
-
A
IGSS VGS = ±20V
-
- ±500 nA
rDS(ON) ID = -0.3A, VGS = -10V, (Figures 7, 8)
- 1.000 1.500 Ω
gfs
VDS < 50V, ID = -0.3A, (Figure 11)
0.6 1.0 -
S
td(ON) VDD = 0.5 x Rated BVDSS, ID ≈ 0.6A, RG = 9.1Ω
-
15 40
ns
tr
VGS = -10V, (Figures 16, 17)
RL = 165Ω for VDD = 100V
-
25 50
ns
td(OFF) MOSFET Switching Times are Essentially Indepen-
-
80 120 ns
tf
dent of Operating Temperature.
-
50 75
ns
Qg(TOT) VGS = -10V, ID = -0.6A, VDS = 0.8 x Rated BVDSS,
-
IG(REF) = 1.5mA, (Figures 13, 18, 19)
Qgs
Gate Charge is Essentially Independent of Operating
Temperature
-
Qgd
-
16 22 nC
10
-
nC
4
-
nC
CISS VDS = -25V, VGS = 0V, f = 1MHz, (Figure 10)
- 350 -
pF
COSS
- 100 -
pF
CRSS
-
30
-
pF
LD
Measured From the Drain Modified MOSFET
-
4.0
-
nH
Lead, 2.0mm (0.08in) From Symbol Showing the In-
Header to Center of Die ternal Devices
LS
Measured From the Source Inductances D
Lead, 0.2mm (0.08in) From
-
6.0
-
nH
Header to Source Bonding
LD
Pad
G
LS
Thermal Resistance Junction to Ambient
RθJA Typical Socket Mount
S
-
-
120 oC/W
4-52
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