RGP02-12 Просмотр технического описания (PDF) - New Jersey Semiconductor

Номер в каталоге

Компоненты Описание

Список матч

RGP02-12

HIGH VOLTAGE FAST RECOVERY RECTIFIERS

New Jersey Semiconductor 

<cyv£07 /

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

RGP02-12E//20E

PRV: 1200-2000 Volts

lo : 0.5 Ampere

Li'nc..

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 376-8960

HIGH VOLTAGE

FAST RECOVERY RECTIFIERS

DO-41

FEATURES:

* Glass passivated junction

* High current capability

* High surge current capability

* High reliability

* Low reverse current

* Low forward voltage drop

* Fast switching for high efficiency

0.107(2.7)

0.080 (2.0)

1.00(25.4)

MIN.

0.205 (5.2)

0.166(4.2)

MECHANICAL DATA:

* Case : DO-41 Molded plastic

* Epoxy : UL94V-0 rate flame retardant

* Lead : Axial lead solderable per MIL-STD-202,

Method 208 guaranteed

* Polarity : Color band denotes cathode end

* Mounting position : Any

* Weight: 0.339 gram

0.034 (0.86)

0.028(0.71)

1.00(25.4)

MIN.

Dimensions in inches and ( millimeters )

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratinq at 25 °C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by20%.

RATING

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Current

0.375"(9.5mm) Lead Length

Ta = 55 °C

Peak Forward Surge Current 8.3 ms. Single half sine wave

Superimposed on rated load (JEDEC Method)

Maximum Peak Forward Voltage at 0.5 Amp.

Maximum DC Reverse Current

Ta = 25 °C

at Rated DC Blocking Voltage

Ta = 1 00 °C

Maximum Reverse Recovery Time ( Note 1 )

Typical Junction Capacitance ( Note 2 )

Junction Temperature Range

Storage Temperature Range

SYMBOL RGP

02-12

VRRM 1200

VRMS

840

VDC

1200

RGP

02-14

1400

980

1400

RGP

02-16

1600

1120

1600

RGP

02-18

1800

1260

1800

RGP

02-20

2000

1400

2000

UNITS

Volts

Volts

Volts

lF(AV)

0.5

Amps.

IFSM

VF

|R

|R(H)

Trr

CJ

TJ

TSTG

20

2.5

5.0

50

300

5.0

-65 to +150

-65to+150

Amps.

Volts

HA

HA

ns

pf

°c

°C

Notes :

(1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25A.

( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC

Quality Semi-Conductors

Share Link: