C4265 Просмотр технического описания (PDF) - Inchange Semiconductor

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C4265

Silicon NPN RF Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN RF Transistor

isc RF Product Specification

2SC4265

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CBO Collector-Base Breakdown Voltage

IC= 10μA ; IE= 0

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; RBE= ∞

ICBO

Collector Cutoff Current

VCB= 15V; IE= 0

IEBO

Emitter Cutoff Current

VEB= 3V; IC= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= 20mA ; IB= 4mA

hFE

DC Current Gain

IC= 10mA ; VCE= 10V

fT

Current-Gain—Bandwidth Product

IC= 10mA ; VCE= 10V

COB

Output Capacitance

IE= 0 ; VCB= 10V;f= 1.0MHz

MIN TYP. MAX UNIT

30

V

20

V

0.5 μA

10 μA

1.0

V

40

600

MHz

1.5 pF

isc Website：www.iscsemi.cn

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