C4262 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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C4262

Silicon NPN Epitaxial

Hitachi -> Renesas Electronics 

2SC4262

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Ratings

Unit

20

V

15

V

3

V

50

mA

100

mW

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ Max Unit Test conditions

Collector to base breakdown

V(BR)CBO

20

—

—

V

voltage

IC = 10 µA, IE = 0

Collector to emitter breakdown V(BR)CEO 15

—

—

V

voltage

IC = 1 mA, RBE = ∞

Collector cutoff current

I CBO

—

—

0.5 µA

VCB = 15 V, IE = 0

Emitter cutoff current

I EBO

—

—

1.0 µA

VEB = 3 V, IC = 0

Collector to emitter saturation VCE(sat) —

—

0.5 V

voltage

IC = 20 mA, IB = 4 mA

DC current transfer ratio

hFE

Collector output capacitance Cob

Gain bandwidth product

fT

Note: Marking is “IP–”.

50

—

200

VCE = 10 V, IC = 5 mA

—

—

1.0 pF

VCB = 10 V, IE = 0, f = 1MHz

1.4

2.9

—

GHz VCE = 10 V, IC = 5 mA

See characteristic curves of 2SC3793.

2

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