C4510 Просмотр технического описания (PDF) - New Jersey Semiconductor
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C4510 Datasheet PDF : 2 Pages
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Silicon NPN Power Transistor
2SC4510
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VcEO(SUS) Collector-Emitter Sustaining Voltage lc= 0.2A; |B= 0
400
V
V(BR)CBO Collector-Base Breakdown Voltage
V(BR)EBO Emitter-Base Breakdown Voltage
lc=1mA;lE=0
lE=1mA;lc=0
500
V
10
V
VcE(sat)
VBE(sat)
ICBO
Collector-Emitter Saturation Voltage lc=6A; IB=1.2A
Base-Emitter Saturation Voltage
IC=6A;IB=1.2A
Collector Cutoff Current
VCB= 450V; IE= 0
0.8
V
1.2
V
0.1 mA
IEBO
Emitter Cutoff Current
VEB=10V; lc=0 .'
0.1 mA
hFE
DC Current Gain
lc= 2A; VCE= 5V
25
65
Switching times
ton
Turn-on Time
lstg
Storage Time
tf
Fall Time
Ic- 7.5A , IB-I- 0.75A; IB2- -1 .5A;
RL= 20 Q ; Pw=20 n s;
Duty Cycle^2%
1.0 us
2.5 u s
0.5 n s
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