C4511 Просмотр технического описания (PDF) - Quanzhou Jinmei Electronic
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C4511 Datasheet PDF : 4 Pages
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JMnic
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=25mA ; IB=0
VCEsat Collector-emitter saturation voltage IC=2A; IB=0.2A
ICBO
Collector cut-off current
VCB=120V; IE=0
IEBO
Emitter cut-off current
VEB=6V; IC=0
hFE
DC current gain
IC=2A ; VCE=4V
COB
Output capacitance
IE=0; VCB=10V;f=1MHz
fT
Transition frequency
IE=-0.5A ; VCE=12V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=3.0A IB1=-IB2=0.3A
VCC=30V ,RL=10Ω
hFE Classifications
O
P
50-100
70-140
Y
90-180
Product Specification
2SC4511
MIN TYP. MAX UNIT
80
V
0.5
V
10
μA
10
μA
50
180
110
pF
20
MHz
0.16
μs
2.60
μs
0.34
μs
2
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