C4511 Просмотр технического описания (PDF) - New Jersey Semiconductor
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C4511 Datasheet PDF : 2 Pages
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Silicon NPN Power Transistor
2SC4511
ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage lc= 25mA; IB= 0
VcE(sat) Collector-Emitter Saturation Voltage lc= 2A; IB= 0.2A
ICBO
Collector Cutoff Current
VCB=120V;IE=0
IEBO
Emitter Cutoff Current
VEB= 6V; lc= 0
hFE
DC Current Gain
lc= 2A ; VCE= 4V
fr
Current-Gain—Bandwidth Product
IE=-0.5A;VCE=12V
COB
Output Capacitance
lE=0;VcB=10V;ftest=1MHz
Switching Times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
lc=3A,RL=10n,
!BI= -\B2= 0.3A,VCcr 30V
MIN TYP. MAX UNIT
80
V
0.5
V
10
pA
10
uA
50
180
20
MHz
110
pF
0.16
11 S
2.60
JJ S
0.34
V- S
Classifications
o
P
Y
50-100 70-140 90-180
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