BT152-400R Просмотр технического описания (PDF) - DIYI Electronic Technology Co., Ltd.

Номер в каталоге

Компоненты Описание

Список матч

BT152-400R

SCR

DIYI Electronic Technology Co., Ltd. 

6&5

ABSOLUTE MAXIMUM RATING (TJ = 25°C, unless otherwise stated)

%72 Series R

PARAMETER

SYMBOL

RATINGS

UNIT

BT152(F)-400R

450

Repetitive Peak Off-State Voltages

BT152(F)-650R VDRM, VRRM

650

V

BT152(F)-800R

800

Average On-State Current (half sine wave; Tmb ≤103°C)

RMS on-State Current (all conduction angles)

IT(AV)

IT(RMS)

13

A

20

A

Non-Repetitive Peak On-State Current

t = 10 ms

(half sine wave; TJ = 25 °C prior to surge) t = 8.3 ms

ITSM

I2t for Fusing (t = 10 ms)

I2t

200

220

A

200

A2s

Repetitive Rate of Rise of On-State Current After Triggering

(ITM = 50 A; IG = 0.2 mA; dIG /dt = 0.2 mA/μs)

dIT /dt

200

A/μs

Peak Gate Current

Peak Gate Voltage

IGM

VGM

5

A

5

V

Peak Reverse Gate Voltage

Peak Gate Power

VRGM

PGM

5

V

20

W

Average Gate Power (Over any 20 ms period)

Operating Junction Temperature

PG(AV)

TJ

0.5

W

125

°C

Storage Temperature

TSTG

-40 ~150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

Junction to Ambient

In Free Air

θJA

60

K/W

Thermal Resistance Junction to Mounting Base

θJMB

1.1

K/W

STATIC CHARACTERISTICS (TJ = 25°C, unless otherwise stated)

PARAMETER

Gate Trigger Current

Latching Current

Holding Current

On-State Voltage

Gate Trigger Voltage

Off-State Leakage Current

SYMBOL

CONDITIONS

IGT VD = 12 V, IT = 0.1 A

IL VD = 12 V, IGT = 0.1 A

IH VD = 12 V, IGT = 0.1 A

VT IT=40A

VGT

VD = 12 V, IT = 0.1 A

VD = VDRM(max) , IT = 0.1 A, TJ = 125 °C

ID , IR VD = VDRM(max) , VR = VRRM(max) ,TJ = 125°C

DYNAMIC CHARACTERISTICS (TJ = 25°C, unless otherwise stated)

MIN

0.25

PARAMETER

SYMBOL

CONDITIONS

MIN

Critical Rate of Rise of

Off-State Voltage

dVD /dt

VDM = 67% VDRM(max), TJ = 125 °C,

exponential waveform;Gate open circuit

200

Gate Controlled Turn-on

Time

Circuit Commutated

Turn-off tIme

tGT

ITM = 40 A, VD = VDRM(max), IG = 0.1 A,

dIG /dt = 5 A/μs

tQ

ITM = 50 A, VR = 25 V, dITM /dt = 30 A/μs,

dVD /dt = 50 V/μs, RGK = 100 Ω

TYP

4

13

12

1.4

0.7

0.4

0.2

MAX

300

2

70

MAX

5

80

60

1.75

1.5

UNIT

mA

mA

mA

V

V

1.0 mA

UNIT

V/μs

μs

μs

Mar.2015-REV.00

www.sddydz.com

2 of 5

Share Link: