PDM31256SA15T(1996) Просмотр технического описания (PDF) - Paradigm Technology

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PDM31256SA15T
(Rev.:1996)

3.3V 256K Static RAM 32K x 8-Bit Low Voltage

Paradigm Technology 

PDM31256

DC Electrical Characteristics (VCC = 3.3V ± 0.3V)

Symbol Parameter

Test Conditions

ILI

Input Leakage Current

VCC = MAX., VIN = Vss to VCC

ILO

Output Leakage Current

VCC= MAX.,

CE = VIH, VOUT = Vss to VCC

VIL

Input Low Voltage

VIH

Input High Voltage

VOL

Output Low Voltage

IOL= 8 mA, VCC = Min.

IOL = 10 mA, VCC = Min.

VOH

Output High Voltage

IOH = –4 mA, VCC = Min.

NOTE:1.VIL(min) = –3.0V for pulse width less than 20 ns.

Min. Max. Unit

Com’l/ –5

Ind.

5

µA

Com’l/ –5

Ind.

5

µA

–0.3(1)

0.8

V

2.2 Vcc+0.3 V

—

0.4

V

—

0.5

2.4

—

V

Power Supply Characteristics

Symbol Parameter

ICC Operating Current

CE = VIL

f = fMAX = 1/tRC

VCC = Max.

IOUT = 0 mA

ISB Standby Current

CE = VIH

f = fMAX = 1/tRC

VCC = Max.

ISB1 Full Standby Current

CE ≥ VHC

f=0

VCC = Max.,

VIN ≥ VCC – 0.2V or ≤ 0.2V

-12

-15

-17

-20

Com’l. Com’l Ind. Com’l Ind. Com’l Ind. Unit

130 120 120 120 120 110 110 mA

40

35 35 35 35 30 30 mA

10

10 15 10 15 10 15 mA

NOTES: All values are maximum guaranteed values.

VLC ≤ 0.2V, VHC ≥ VCC – 0.2V

Capacitance(1) (TA = +25°C, f = 1.0 MHz)

Symbol

Parameter

Max.

Unit

CIN

COUT

Input Capacitance

Output Capacitance

8

pF

8

pF

NOTE: 1. This parameter is determined by device characterization but is not production

tested.

1

2

3

4

5

6

7

8

9

10

11

12

Rev. 3.0 - 7/24/96

7-3

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