NID9N05ACL(2016) Просмотр технического описания (PDF) - ON Semiconductor

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NID9N05ACL
(Rev.:2016)

Power MOSFET

ON Semiconductor 

NID9N05ACL, NID9N05BCL

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

SWITCHING CHARACTERISTICS (Note 4)

Gate Charge

(VGS = 4.5 V, VDS = 15 V,

ID = 1.5 A) (Note 3)

SOURCE−DRAIN DIODE CHARACTERISTICS

QT

−

3.6

−

nC

Q1

−

1.0

−

Q2

−

2.0

−

Forward On−Voltage

(IS = 4.5 A, VGS = 0 V) (Note 3)

VSD

−

0.86

1.2

V

(IS = 4.0 A, VGS = 0 V)

−

0.845

−

(IS = 4.5 A, VGS = 0 V, TJ = 125°C)

−

0.725

−

Reverse Recovery Time

(IS = 4.5 A, VGS = 0 V,

dIs/dt = 100 A/ms) (Note 3)

trr

−

700

−

ns

ta

−

200

−

tb

−

500

−

Reverse Recovery Stored Charge

QRR

−

6.5

−

mC

ESD CHARACTERISTICS

Electro−Static Discharge

Capability

Human Body Model (HBM)

Machine Model (MM)

ESD

5000

−

500

−

−

V

−

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

4. Switching characteristics are independent of operating junction temperatures.

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