CXA3188N Просмотр технического описания (PDF) - Sony Semiconductor
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CXA3188N Datasheet PDF : 16 Pages
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CXA3188N
Unless otherwise specified, VCC=5 V, Ta=25 °C, fWD (Write data frequency) =5 MHz, IW=15 mA, LH (Head
inductance) =1 µH, RH (Head DC resistance value) =30 Ω
Item
Symbol
Measurement conditions
Min. Typ. Max. Unit.
Head differential
Differential voltage between HX pin and HY pin
VSW
9
Vp-p
voltage amplitude
at switching of Write current
Mode switching time
Read to Write
TRW is the time required for Write current to turn
TRW to 90 % after Pin 15 changes from “High” to
“Low”.
0.13 0.3 µs
TWR1 is the time required for the Read amplifier
TWR1 output∗ to turn to 90 % after Pin 15 changes
0.2 0.3 µs
Mode switching time
from “Low” to “High”.
Write to Read
TWR2 is the time required for Write current to
TWR2 decreases to 10 % after Pin 15 changes from
0.1 0.3 µs
“Low” to “High”.
Mode switching time
TIR is the time required for the Read amplifier
Power saving
TIR output∗ to turn to 90 % after Pin 16 changes
1 µs
to Read
from “High” to “Low”.
TSA1 is the time required for Pin 8 to turn “High”
Mode switching time
TSA1 after the last transition of Write data when Write 1.0 2.3 3.0 µs
safe to unsafe
data is stopped in Write mode.
Mode switching time
unsafe to safe
TSA2 is the time required for Pin 8 to turn “Low”
TSA2 after the first transition of Write data in Write
mode.
0.6 µs
Head switching time
TH is the time required for the Read amplifier
TH output∗ to reach 90 % when the selected head
switched in Read mode.
0.6 µs
Write current
propagation delay
time
Write current
rise/fall time
TPD is the time required for Write current to
TPD reach 90 % after the Write data falling edge.
TR/TF
TR is the time required for Write current to reach
90 % from 10 %; TF is the same time required
to reach 10 % from 90 %. LH=0 µH, RH=0 Ω
2 7 ns
1 3 ns
∗Read amplifier output 100 mVp-p 10 MHz
—7—
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