MM4150 Просмотр технического описания (PDF) - Willas Electronic Corp.
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MM4150 Datasheet PDF : 1 Pages
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WILLAS
MM4150
S
0.1AMP S
1N4150 mini-MELF SIGNAL DIODE Pb Free Product
Absolute Maximum Ratings (Ta=25°C)
Items
Symbol Ratings Unit
Reverse Voltage
VR
50
V
Reverse Recovery trr
4
ns
FEATURES
* Extremely Low VF
* Extremely thin package
* Low stored charge
m in i-MEL F
Time
* Majority carrier conduction
Power Dissipation
Ptot
500 mW
1.40
1.30
Forward Current
IF
200
mA
Junction Temp.
Storage Temp.
Tj -65 to 200 °C
Tstg -65 to 200 °C
Mechanical Data
Items
Materials
Package
Mini MELF
Case
Hermetically sealed glass
Lead/Finish Double stud/Solder Plating
0.4
MECHANICAL
DATA 0.2
2 Places
* Case:Molded plastic, JEDEC SOD-323(SC-7633..)4200
* Terminal : Solder plated, solderable per MIL-STD-750,
Method 2026
* Polarity : Indicated by cathode band
* Mounting Position : Any
Dimensions in millimeters
.059 (1.5)
.043 (1.1)
Chip
Glass Passivated
* Weight : 0.000159 ounce, 0.0045 gram
Ma
Electrical Characteristics (Ta=25°C)
Ratings
Minimum Breakdown Voltage
@IR= 100uA
Peak Forward Surge Current
PW< 1sec.
Maximum Forward Voltage
IF= 200mA
Maximum Reverse Current
VR= 50V
Maximum Junction Capacitance
VR= 0, f= 1 MHz
Maximum Reverse Recovery Time
IF= 10mA, VR= 6V, IRR= 1mA, RL= 100Ω
Maximum Thermal Resistance
MAXISMymUbMol RATINRGatiAngNs D ELECTURnitICAL CHA
Rating 25oC aBmVbient temperature unless7o5therwise specified.
V
Single phase half wave, 60Hz, resistive of inductive load.
For capaciItiFvesluoargd,ederate current by 205% 00
mA
Parameter
VF
Repetitive Peak Reverse Voltage
Continuous Reverse Voltage
IR
Forward Voltage
Reverse CurreCnt j
Mean Rectifying Current
Peak forward sturrrge current
Capacitance between terminals
Operating TeRmθpJerAature
Storage Temperature
Conditions
1.0
V
10I F0= 10mA DC
I F = 100mA DC
4VR = 10V DC
4
0.35
nA
pF
ns
°C/mW
WILLAS ELECTRONIC CORP.
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