MGB15N43CL Просмотр технического описания (PDF) - ON Semiconductor
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MGB15N43CL Datasheet PDF : 8 Pages
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MGP15N43CL, MGB15N43CL
20
18 VCC = 300 V
16 VGE = 5.0 V
14
TJ = 25°C
L = 300 mH
12
td(off)
10
8
tf
6
4
2
0
250
500
750
RG, GATE RESISTANCE (OHMS)
1000
Figure 7. Switching Speed versus Gate Resistance
20
18
16
14
12
10
8
6
4
2
0
250
td(off)
tf
VCC = 300 V
VGE = 5.0 V
TJ = 150°C
IC = 10 A
L = 300 µH
500
750
RG, GATE RESISTANCE (OHMS)
1000
Figure 8. Switching Speed versus Gate Resistance
25
VCC = 300 V
VGE = 5.0 V
20 RG = 1000 Ω
IC = 10 A
L = 300 µH
15
td(off)
10
tf
5
0
–50 –25 0 25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
Figure 9. Switching Speed versus Case Temperature
30
25
25°C
20
150°C
15
VCC = 50 V
VGE = 5.0 V
RG = 1000 Ω
10
5
0
0 1 2 3 4 5 6 7 8 9 10
INDUCTOR (mH)
Figure 11. Latch Current versus Inductor (Typical)
25
20
td(off)
15
10
VCC = 300 V
VGE = 5.0 V
5
RG = 1000 Ω
TJ = 150°C
L = 300 mH
0
0
2
4
6
tf
8 10 12 14 16
IC, COLLECTOR CURRENT (AMPS)
Figure 10. Total Switching Losses
versus Collector Current
20
18
16
14
3.0 mH
12
10
6.0 mH
8
6
VCC = 50 V
4
VGE = 5.0 V
RG = 1000 Ω
2
0
0
25 50 75 100 125 150 175
TEMPERATURE (°C)
Figure 12. Latch Current versus Temperature (Typical)
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4
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