LIS2L02AQ Просмотр технического описания (PDF) - STMicroelectronics
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LIS2L02AQ Datasheet PDF : 9 Pages
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LIS2L02AQ
Table 2. Electrical Characteristics (continued)
(Temperature range -40°C to +85°C) All the parameters are specified @ Vdd =3.3V, T=25°C unless
otherwise noted
Symbol
Parameter
Test Condition
Min.
Typ.1
Max.
Unit
Cload Capacitive load drive10
320
pF
Ton Turn-On Time at exit from
Power Down mode
Cload in µF
550*Cload
ms
+0.3
Notes: 1. Typical specifications are not guaranteed
2. Offset and sensitivity are essentially ratiometric to supply voltage
3. Guaranteed by wafer level test and measurement of initial offset and sensitivity
4. Guaranteed by design through measurements done up to 1g
5. Contribution to the measuring output of the inclination/acceleration along the perpendicular axis
6. Guaranteed by design
7. Self test “output voltage delta change” is defined as Vout(Vst=Logic1)-Vout(Vst=Logic0)
8. Self test “output voltage delta change” varies cubically with supply voltage
9. When full-scale is set to 6g, self-test “output delta change” is one third of the specified value
10.Bandwidth=1/(2*π*110KΩ*Cload)
ABSOLUTE MAXIMUM RATING
Stresses above those listed as “absolute maximum ratings” may cause permanent damage to the device. This
is a stress rating only and functional operation of the device under these conditions is not implied. Exposure to
maximum rating conditions for extended periods may affect device reliability.
Table 3. Absolute Maximum Rating
Symbol
Ratings
Vdd
Supply voltage
Vin
Input voltage on any control pin (FS, PD, ST)
APOW Acceleration (Any axis, Powered, Vdd=3.3V)
AUNP Acceleration (Any axis, Unpowered)
TOP
TSTG
ESD
Operating Temperature Range
Storage Temperature Range
Electrostatic discharge protection
Maximum Value
Unit
-0.3 to 7
V
-0.3 to Vdd +0.3
V
3000g for 0.5 ms
10000g for 0.1 ms
3000g for 0.5 ms
10000g for 0.1 ms
-40 to +85
°C
-40 to +105
°C
2KV HBM
4/9
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