IN74HC652 Просмотр технического описания (PDF) - Integral Corp.

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IN74HC652

OCTAL 3-STATE BUS TRANSCEIVERS AND D FLIP-FLOPS High-Performance Silicon-Gate CMOS

Integral Corp. 

IN74HC652

DC ELECTRICAL CHARACTERISTICS(Voltages Referenced to GND)

VCC

Guaranteed Limit

Symbol Parameter

Test Conditions

V 25 °C ≤85 ≤125 Unit

to

°C °C

-55°C

VIH Minimum High-

VOUT=0.1 V or VCC-0.1 V 2.0 1.5

1.5 1.5

V

Level Input

IOUT≤ 20 µA

4.5 3.15 3.15 3.15

Voltage

6.0 4.2 4.2 4.2

VIL Maximum Low - VOUT=0.1 V or VCC-0.1 V 2.0 0.5

0.5 0.5

V

Level Input

IOUT ≤ 20 µA

4.5 1.35 1.35 1.35

Voltage

6.0 1.8 1.8 1.8

VOH Minimum High-

Level Output

Voltage

VIN=VIH or VIL

IOUT ≤ 20 µA

2.0 1.9 1.9 1.9 V

4.5 4.4 4.4 4.4

6.0 5.9 5.9 5.9

VIN=VIH or VIL

IOUT ≤ 6.0 mA

IOUT ≤ 7.8 mA

4.5 3.98 3.84 3.7

6.0 5.48 5.34 5.2

VOL Maximum Low-

Level Output

Voltage

VIN= VIL or VIH

IOUT ≤ 20 µA

2.0 0.1 0.1 0.1 V

4.5 0.1 0.1 0.1

6.0 0.1 0.1 0.1

VIN=VIH or VIL

IOUT ≤ 6.0 mA

IOUT ≤ 7.8 mA)

4.5 0.26 0.33 0.4

6.0 0.26 0.33 0.4

IIN

Maximum Input

VIN=VCC or GND

Leakage Current (Pins 1,2,3,21,22,and

6.0 ±0.1 ±1.0 ±1.0 µA

23)

IOZ Maximum Three- Output in High-

State Leakage Impedance State

6.0 ±0.5 ±5.0 ±10 µA

Current

VIN= VIL or VIH

VOUT=VCC or GND,

I/O Pins

ICC Maximum

VIN=VCC or GND

Quiescent Supply IOUT=0µA

Current

6.0 8.0 80 160 µA

(per Package)

3

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