ILD3 Просмотр технического описания (PDF) - Infineon Technologies

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ILD3

Phototransistor Optocoupler

Infineon Technologies 

Characteristics

Emitter (IR GaAs)

Symbol

Forward Voltage

Reverse Current

Capacitance

Thermal Resistance, Junction to Lead

Detector

VF

IR

C0

RTHJL

Collector-Emitter Leakage Current

ICEO

Capacitance

CCE

Thermal Resistance, Junction to Lead

RTHJL

Package Transfer Characteristics (Each Channel)

Saturated Current Transfer Ratio, ILD/Q3-1

Saturated Current Transfer Ratio, ILD/Q3-2

Common Mode Rejection Output High

CTR SAT

CTR SAT

CMH

Min.

—

—

—

—

—

—

—

300

100

—

Typ.

1.25

0.01

25

750

Max. Unit

1.65 V

10

µA

—

pF

—

K/W

5.0

70

nA

6.8

—

pF

500

—

K/W

—

—

—

—

5000 —

%

%

V/µs

Common Mode Rejection Output Low

CML

—

5000 —

V/µs

Common Mode Coupling Capacitance

Package Capacitance

CCM

—

0.01 —

pF

CIO

—

0.8

—

pF

Test Condition

IF=60 mA

VR=6.0 V

VR=0 V, f=1.0 MHz

—

VCE=15 V

VCE=5.0 V, f=1.0 MHz

—

IF=1.6 mA, VCE=0.4 V

IF=1.0 mA, VCE=0.4 V

VCM=50 VP-P, RL=10 kΩ,

IF=0 mA

VCM=50 VP-P, RL=10 kΩ,

IF=0 mA

—

VIO=0 V, f=1.0 MHz

 2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA

www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)

2–178

ILD/Q3

March 8, 2000-01

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