GOG95012 Просмотр технического описания (PDF) - Green Power Semiconductors
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GOG95012 Datasheet PDF : 3 Pages
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Green Power
Semiconductors
GPS - Green Power Semiconductors SPA
Factory: Via Ungaretti 10, 16157 Genova, Italy
Phone: +39-010-667 8800
Fax: +39-010-667 8812
Web: www.gpsemi.it
E-mail: info@gpsemi.it
GOG9xx12
THREE PHASE AC-DC BRIDGE
Fuse protection
Temperature sensors
Snubber for SCR's protections
Extractible stacks for easy field service
LINE VOLTAGE UP TO 690V
DC OUTPUT CURRENT 1200A
Line to line voltage
GOG94012 GOG95012 GOG96012
400 V
500 V
690 V
Characteristic
IDC
DC output current
VINS (rms) Insulation voltage
Conditions
Value
1200 A
3000 V
Value
1200 A
3000 V
Value
1000 A
3000 V
THYRISTOR TRIGGERING CHARACTERISTICS
VGT
Gate trigger voltage
Tj = 25 °C, VD = 5 V
IGT
Gate trigger current
Tj = 25 °C, VD = 5 V
dV/dt
Critical rate of rise off-state voltage Tj= 125 °C
VRRM
Blocking Voltage
Tj = 125 °C
2.5 V
250 mA
1000 V/us
1200 V
2.5 V
250 mA
1000 V/us
1600 V
2.5 V
250 mA
1000 V/us
2200 V
FUSE TYPE (SIBA code)
VNF
Rated voltage
INF
Rated current
PVF
Power loss
I²t
Total I2t
At rated current
2067132.800 2067132.800 2078132.700
690 V
690 V
1250 V
800 A
800 A
700 A
W
kA2s
W
kA2s
W
kA2s
MECHANICAL AND THERMAL CHARACTERISTICS
Width
Depth
Height
Mass
Ta max Max amb. op. Temp.
Tstg
Storage temperature
500 mm
275 mm
655 mm
65 kg
40 °C
-40/125 °C
500 mm
275 mm
655 mm
65 kg
40 °C
-40/125 °C
500 mm
275 mm
655 mm
65 kg
40 °C
-40/125 °C
Document GOG9xx12T002
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