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FX20ASJ-06

Pch POWER MOSFET HIGH-SPEED SWITCHING USE

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PRELIMINARY NSootimcee: pTahriasmisentroict alimfinitsalasrpeescuifbicjeactitotno. change.

FX20ASJ-06

MITSUBISHI Pch POWER MOSFET

FX20ASJ-06

HIGH-SPEED SWITCHING USE

OUTLINE DRAWING

6.5

5.0 ± 0.2

4

Dimensions in mm

0.5 ± 0.1

• 4V DRIVE

• VDSS ............................................................... –60V

• rDS (ON) (MAX) ................................................ 97mΩ

• ID .................................................................... –20A

• Integrated Fast Recovery Diode (TYP.) ...........50ns

APPLICATION

Motor control, Lamp control, Solenoid control

DC-DC converter, etc.

1.0

0.9 max

2.3 2.3

A

0.5 ± 0.2

0.8

123

3

1

24

1 GATE

2 DRAIN

3 SOURCE

4 DRAIN

MP-3

MAXIMUM RATINGS (Tc = 25°C)

Symbol

VDSS

VGSS

ID

IDM

IDA

IS

ISM

PD

Tch

Tstg

—

Parameter

Drain-source voltage

Gate-source voltage

Drain current

Drain current (Pulsed)

Avalanche drain current (Pulsed)

Source current

Source current (Pulsed)

Maximum power dissipation

Channel temperature

Storage temperature

Weight

VGS = 0V

VDS = 0V

L = 100µH

Typical value

Conditions

Ratings

–60

±20

–20

–80

–20

–20

–80

35

–55 ~ +150

–55 ~ +150

0.26

Unit

V

V

A

A

A

A

A

W

°C

°C

g

Jan.1999

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