MPF930 Просмотр технического описания (PDF) - New Jersey Semiconductor
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MPF930 Datasheet PDF : 2 Pages
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TMOS Switching
N-Channel — Enhancement
3 DRAIN
MPF930
MPF960
MPF990
1 SOURCE
MAXIMUM RATINGS
Rating
Drain -Source Voltage
Drain-Gate Voltage
Gate-Source Voltage
— Continuous
— Non-repetitive (tp < 50 u.s)
Drain Current
Continuous^)
Pulsed(2)
Total Device Dissipation
@TA = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VDS
VDG
VGS
VGSM
ID
'DM
PD
TJ. Tstg
MPF930 MPF960 MPF990 Unit
35
60
90
Vdc
35
60
90
Vdc
±20
Vdc
±40
Vpk
Adc
2.0
3.0
1.0
8.0
-55 to 150
Watts
mVW°C
°C
TO-92 (TO-226AE)
Thermal Resistance
9JA
125
"C/W
ELECTRICAL CHARACTERISTICS OA = 25°c unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
(VGS = O,lD= 10u-Adc)
MPF930
MPF960
MPF990
V(BR)DSX
Vdc
35
—
—
60
—
—
90
—
—
Gate Reverse Current (VQS = 15 Vdc, VDS = °)
ON CHARACTERISTICS^)
'GSS
—
—
50
nAdc
Zero-Gate-Voltage Drain Current
(VDS = Maximum Rating, VQS = 0)
'DSS
—
—
10
uAdc
Gate Threshold Voltage
(lD=1.0mAdc.VDS = VGs)
Drain-Source On-Voltage (Vgs = 1 ° Vdc)
(ID = 0.5 Adc)
(ID = 1.0 Adc)
(ID = 2.0 Adc)
MPF930
MPF960
MPF990
MPF930
MPF960
MPF990
MPF930
MPF960
MPF990
vGS(Th)
1.0
—
3.5
Vdc
vDS(on)
—
—
_
—
—
—
—
—
—
Vdc
0.4
0.7
0.6
0.8
0.6
1.2
0.9
1.4
1.2
1.7
1.2
2.4
2.2
3.0
2.8
3.5
2.8
4.8
1. The Power Dissipation of the package may result in a lower continuous drain current.
. Pulse Test: Pulse Width ^ 300 us, Duty Cycle z 2.0%.
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
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