SSRAM
AS5SS256K18
IDD ELECTRICAL CHARACTERISTICS AND RECOMMENDED OPERATING CONDITIONS
(-55oC < TA < +125oC, -40oC < TA < +105oC and -40oC<TA<+85oC; VDD = +3.3V ±5% unless otherwise noted)
PARAMETER
Power Supply Current:
Operating
CONDITIONS
Device selected; all inputs < VIL or > VIH;
Cycle time > tKC (MIN); VDD = MAX; Outputs Open
SYM
IDD
MAX
-8 -9 -10 UNITS NOTES
225 205 185 mA 2, 3, 4
CMOS Standby
TTL Standby
Device deselected; VDD = MAX;
All inputs < Vss +0.2 or > VDDQ -0.2;
All inputs static; CLK frequency =0
Device deselected; VDD = MAX;
All inputs < VIL or > VIH;
All inputs static; CLK frequency = 0
ISB2 90 90 90 mA 3, 4
ISB3 120 120 120 mA 3, 4
NOTES:
1. VDDQ = +3.3V ± 5%
2. IDD is specified with no output current and increases with faster cycle times. IDDQ increases with faster cycle
times and greater output loading.
3. “Device deselected” means device is in power-down mode as defined in the truth table. “Device selected” means
device is active (not in power-down mode).
4. Typical values are measured at 3.3V, 25°C and 15ns cycle time.
AS5SS256K18
Rev. 2.5 10/13
Micross Components reserves the right to change products or specifications without notice.
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