AS5SS256K18DQ-8/ET Просмотр технического описания (PDF) - Micross Components

Номер в каталоге

Компоненты Описание

Список матч

AS5SS256K18DQ-8/ET

256K x 18 SSRAM Synchronous Burst SRAM, Flow-Through

Micross Components 

SSRAM

AS5SS256K18

IDD ELECTRICAL CHARACTERISTICS AND RECOMMENDED OPERATING CONDITIONS

(-55oC < TA < +125oC, -40oC < TA < +105oC and -40oC<TA<+85oC; VDD = +3.3V ±5% unless otherwise noted)

PARAMETER

Power Supply Current:

Operating

CONDITIONS

Device selected; all inputs < VIL or > VIH;

Cycle time > tKC (MIN); VDD = MAX; Outputs Open

SYM

IDD

MAX

-8 -9 -10 UNITS NOTES

225 205 185 mA 2, 3, 4

CMOS Standby

TTL Standby

Device deselected; VDD = MAX;

All inputs < Vss +0.2 or > VDDQ -0.2;

All inputs static; CLK frequency =0

Device deselected; VDD = MAX;

All inputs < VIL or > VIH;

All inputs static; CLK frequency = 0

ISB2 90 90 90 mA 3, 4

ISB3 120 120 120 mA 3, 4

NOTES:

1. VDDQ = +3.3V ± 5%

2. IDD is specified with no output current and increases with faster cycle times. IDDQ increases with faster cycle

times and greater output loading.

3. “Device deselected” means device is in power-down mode as defined in the truth table. “Device selected” means

device is active (not in power-down mode).

4. Typical values are measured at 3.3V, 25°C and 15ns cycle time.

AS5SS256K18

Rev. 2.5 10/13

Micross Components reserves the right to change products or specifications without notice.

6

Share Link: