EFC480 Просмотр технического описания (PDF) - Unspecified
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EFC480 Datasheet PDF : 2 Pages
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Excelics
EFC480C
PRELIMINARY DATA SHEET
Low Distortion GaAs Power FET
• +33.5dBm TYPICAL OUTPUT POWER
• 18.0dB TYPICAL POWER GAIN AT 2GHz
• High BVgd FOR 10V BIAS
• 0.5 X 4800 MICRON RECESSED “MUSHROOM” GATE
• Si3N4 PASSIVATION AND PLATED HEAT SINK
• ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
• Idss SORTED IN 80mA PER BIN RANGE
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
'
'
6
*
6
*
6
Chip Thickness: 75 ± 13 microns
All Dimensions In Microns
SYMBOLS
P1dB
G1dB
PAE
PARAMETERS/TEST CONDITIONS
Output Power at 1dB Compression
Vds=8V, Ids=50% Idss
Gain at 1dB Compression
Vds=8V, Ids=50% Idss
Gain at 1dB Compression
Vds=8V, Ids=50% Idss
f= 2GHz
f= 4GHz
f= 2GHz
f= 4GHz
f= 2GHz
MIN
32.0
16.0
TYP
33.5
33.5
18.0
12.5
40
MAX UNIT
dBm
dB
%
Idss
Saturated Drain Current Vds=3V, Vgs=0V
640 960 1440 mA
Gm
Transconductance
Vds=3V, Vgs=0V
200 560
mS
Vp
Pinch-off Voltage
Vds=3V, Ids=10mA
-2.5 -4.0 V
BVgd
Drain Breakdown Voltage Igd=4.8mA
-15 -20
V
BVgs
Rth
Source Breakdown Voltage Igs=4.8mA
Thermal Resistance (Au-Sn Eutectic Attach)
-10 -17
12
V
oC/W
MAXIMUM RATINGS AT 25OC
SYMBOLS PARAMETERS
ABSOLUTE 1
CONTINUOUS2
Vds
Drain-Source Voltage
14V
10V
Vgs
Gate-Source Voltage
-8V
-4.5V
Ids
Drain Current
Idss
960mA
Igsf
Forward Gate Current
120mA
20mA
Pin
Input Power
32dBm
Tch
Channel Temperature
175oC
Tstg
Storage Temperature
-65/175oC
@3dB Compression
150oC
-65/150oC
Pt
Total Power Dissipation
11.4 W
9.5 W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
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