LQ821(2001) Просмотр технического описания (PDF) - Polyfet RF Devices

Номер в каталоге

Компоненты Описание

Список матч

LQ821
(Rev.:2001)

SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

Polyfet RF Devices 

polyfet rf devices

LQ821

General Description

Silicon VDMOS and LDMOS

transistors designed specifically

for broadband RF applications.

Suitable for Militry Radios,

Cellular and Paging Amplifier Base

Stations, Broadcast FM/AM, MRI,

Laser Driver and others.

TM

"Polyfet" process features

low feedback and output capacitances

resulting in high F t transistors with high

input impedance and high efficiency.

SILICON GATE ENHANCEMENT MODE

RF POWER LDMOS TRANSISTOR

20.0 Watts Push - Pull

Package Style AQ

HIGH EFFICIENCY, LINEAR

HIGH GAIN, LOW NOISE

Total

Device

Dissipation

80 Watts

Junction to

Case Thermal

Resistance

o

1.80 C/W

ABSOLUTE MAXIMUM RATINGS ( T = 25 oC )

Maximum

Junction

Temperature

200 oC

Storage

Temperature

o

o

-65 C to 150 C

DC Drain

Current

8.0 A

Drain to

Gate

Voltage

36 V

Drain to

Source

Voltage

36 V

Gate to

Source

Voltage

20 V

RF CHARACTERISTICS ( 20.0 WATTS OUTPUT )

SYMBOL PARAMETER

MIN

TYP MAX UNITS TEST CONDITIONS

Gps

Common Source Power Gain

η

Drain Efficiency

12

55

dB Idq = 0.80 A, Vds = 12.5 V, F = 500MHz

% Idq = 0.80 A, Vds = 12.5 V, F = 500 MHz

VSWR Load Mismatch Tolerance

20:1 Relative Idq = 0.80 A, Vds = 12.5 V, F = 500MHz

ELECTRICAL CHARACTERISTICS ( EACH SIDE )

SYMBOL PARAMETER

MIN

TYP MAX UNITS TEST CONDITIONS

Bvdss

Idss

Drain Breakdown Voltage

Zero Bias Drain Current

36

V

Ids = 0.10 mA, Vgs = 0V

1.0 mA

Vds = 12.5 V, Vgs = 0V

Igss

Gate Leakage Current

1

uA

Vds = 0V Vgs = 30V

Vgs

Gate Bias for Drain Current

1

7

V

Ids = 0.10 A, Vgs = Vds

gM

Forward Transconductance

1.0

Mho

Vds = 10V, Vgs = 5V

Rdson Saturation Resistance

0.60

Ohm

Vgs = 20V, Ids = 3.00 A

Idsat

Saturation Current

7.50

Amp

Vgs = 20V, Vds = 10V

Ciss

Common Source Input Capacitance

33.0

pF

Vds = 12.5 Vgs = 0V, F = 1 MHz

Crss

Common Source Feedback Capacitance

2.0

pF

Vds = 12.5 Vgs = 0V, F = 1 MHz

Coss Common Source Output Capacitance

24.0

pF

Vds = 12.5 Vgs = 0V, F = 1 MHz

POLYFET RF DEVICES

REVISION 04/27/2001

1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com

Share Link: