BCW65 Просмотр технического описания (PDF) - TY Semiconductor

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BCW65

NPN General Purpose Transistors

TY Semiconductor 

SMD Type

TransistIoCrs

Product specification

BCW65,BCW66

Electrical Characteristics Ta = 25

Parameter

Collector-emitter breakdown voltage

Collector-base breakdown voltage

Emitter-base breakdown voltage

BCW65

BCW66

BCW65

BCW66

BCW65

Collector cutoff current

Emitter cutoff current

BCW66

BCW65

BCW66

DC current gain *

DC current gain *

DC current gain *

A/F

hFE-grp. B/G

C/H

A/F

hFE-grp. B/G

C/H

A/F

hFE-grp. B/G

C/H

Collector-emitter saturation voltage *

Base-emitter saturation voltage *

Transition frequency

Collector-base capacitance

Emitter-base capacitance

* Pulse test: t 300ìs, D = 2%.

Symbol

Testconditons

Min Typ Max Unit

V(BR)CEO IC = 10 mA, IB = 0

32

V

45

V(BR)CBO IC = 10 ìA, IE = 0

60

V

75

V(BR)EBO IE = 10 ìA, IC = 0

5

V

ICBO

VCB = 32 V, IE = 0

VCB = 45 V, IE = 0

20

nA

20

ICBO

VCB = 32 V, IE = 0 , TA = 150

VCB = 45 V, IE = 0 , TA = 150

20

ìA

20

IEBO VEB = 4 V, IC = 0

20 nA

35

hFE IC = 100 ìA, VCE = 10 V

50

80

75

hFE IC = 10 mA, VCE = 1 V

110

180

100 160 250

hFE IC = 100 mA, VCE = 1 V

160 250 400

250 350 630

IC = 100 mA, IB = 10 mA

VCE(sat)

IC = 500 mA, IB = 50 mA

IC = 100 mA, IB = 10 mA

VBE(sat)

IC = 500 mA, IB = 50 mA

0.3

0.7

V

1.25

2

fT IC = 50 mA, VCE = 5 V, f = 100 MHz

170

MHz

Ccb VCB = 10 V, f = 1 MHz

Ceb VEB = 0.5 V, f = 1 MHz

6

pF

60

hFE Classification

TYPE

Rank

A

Marking

EAs

BCW65

B

C

EBs

ECs

TYPE

Rank

F

Marking

EFs

BCW66

G

H

EGs

EHs

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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