DG2535E Просмотр технического описания (PDF) - Vishay Semiconductors

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DG2535E

0.3 Ω, Low Voltage Dual SPDT Analog Switches

Vishay Semiconductors 

www.vishay.com

DG2535E, DG2733E

Vishay Siliconix

ORDERING INFORMATION

TEMP. RANGE

-40 °C to +85 °C

PACKAGE

MSOP10

DFN-10

PART NUMBER

DG2535EDQ-T1-GE3

DG2733EDQ-T1-GE3

DG2535EDN-T1-GE4

DG2733EDN-T1-GE4

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Reference to GND

V+

IN, COM, NC, NO a

-0.3 V to +6 V

V

-0.3 V to (V+ + 0.3)

Current (any terminal except NO, NC or COM)

30

Continuous current (NO, NC, or COM)

± 300

mA

Peak current (pulsed at 1 ms, 10 % duty cycle)

± 500

Storage temperature (D suffix)

Power dissipation (packages) b

miniQFN10 c

-65 to +150

°C

208

mW

Latch up current

ESD - HBM

JESD78A

> 400

mA

ANSI / ESDA / JEDEC® JS-001

> 5000

ESD - CDM

JESD22-C101

> 1000

V

ESD - MM

JESD22-A115

> 200

Notes

a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.

b. All leads welded or soldered to PC board.

c. Derate 4 mW/C above 70 °C.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

S17-0156-Rev. A, 30-Jan-17

2

Document Number: 75646

For technical questions, contact: analogswitchtechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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