BUK7507-30B Просмотр технического описания (PDF) - Philips Electronics
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BUK7507-30B Datasheet PDF : 15 Pages
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Philips Semiconductors
BUK75/7607-30B
TrenchMOS™ standard level FET
Table 4: Characteristics…continued
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Source-drain diode
VSD
source-drain (diode forward) IS = 25 A; VGS = 0 V;
-
voltage
Figure 15
trr
reverse recovery time
IS = 20 A; dIS/dt = −100 A/µs
-
Qr
recovered charge
VGS = −10 V; VDS = 20 V
-
Typ
Max
Unit
0.85
1.2
V
46
-
ns
28
-
nC
9397 750 11232
Product data
Rev. 01 — 07 April 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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