BSC042N03SG Просмотр технического описания (PDF) - Infineon Technologies

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BSC042N03SG

OptiMOS™2 Power-Transistor

Infineon Technologies 

Parameter

Symbol Conditions

Thermal characteristics

Thermal resistance, junction - case R thJC

Thermal resistance,

junction - ambient

R thJA

bottom

top

minimal footprint

6 cm2 cooling area2)

BSC042N03S G

min.

Values

typ.

Unit

max.

-

-

2 K/W

18

-

-

62

-

-

45

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V (BR)DSS V GS=0 V, I D=1 mA

30

-

Gate threshold voltage

V GS(th) V DS=V GS, I D=50 µA

1.2

1.6

Zero gate voltage drain current

I DSS

V DS=30 V, V GS=0 V,

T j=25 °C

-

0.1

-V

2

1 µA

V DS=30 V, V GS=0 V,

T j=125 °C

-

10

100

Gate-source leakage current

I GSS

V GS=20 V, V DS=0 V

-

10

100 nA

Drain-source on-state resistance

R DS(on) V GS=4.5 V, I D=50 A

-

5.2

6.5 mΩ

V GS=10 V, I D=50 A

-

3.5

4.2

Gate resistance

RG

0.4

0.9

1.8 Ω

Transconductance

g fs

|V DS|>2|I D|R DS(on)max,

I D=50 A

49

98

-S

1)J-STD20 and JESD22

2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

3) See figure 3

Rev. 1.91

page 2

2009-10-22

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