C67079-A1001-A6 Просмотр технического описания (PDF) - Infineon Technologies

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C67079-A1001-A6

SITAC® AC Switches Without Zero Voltage Switch

Infineon Technologies 

BRT 11, BRT 12, BRT 13

Characteristics

at Tj = 25 °C, unless otherwise specified.

Input Circuit

Parameter

Forward Voltage,

IF = 10 mA

Reverse current,

VR = 6 V

Thermal resistance 2)

junction - ambient

Symbol

VF

Values

Unit

min. typ. max.

- 1.1 1.35 V

IR

-

- 10 µA

RthJA

-

- 750 K/W

Output Circuit

Parameter

Critical rate of rise of off-state voltage

VD = 0.67 VDRM, Tj = 25 °C

VD = 0.67 VDRM, Tj = 80 °C

Critical rate of rise of voltage at current

commutnaictiaotnion

VD = 0.67 VDRM, Tj = 25 °C, di/dtcrq ≤ 15 A/ms

VD = 0.67 VDRM, Tj = 80 °C, di/dtcrq ≤ 15 A/ms

Critical rate of rise of on-state current

Pulse current

tpp ≤≤ 55 µµss,, ff == 110000 H, dz,itpd/idtpt/d≤t8≤A8/µAs/µs

On-state voltage,

IT = 300 mA

Off-state current

TC = 100 °C, VDRM = VDRM

Holding current,

VD = 10 V

Thermal resistance 2)

junction - ambient

Symbol

dv/dtcr

dv/dtcrq

Values

Unit

min. typ. max.

10 -

kV/µs

-

5

-

-

di/dtcr

Itp

10 -

5-

8

-

-

-

-

-

- A/µs

2A

VT

-

- 2.3 V

ID

- 0.5 100 µA

IH

- 80 500

RthJA

-

- 125 K/W

Semiconductor Group

3

12.96

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