BR2500 Просмотр технического описания (PDF) - New Jersey Semiconductor

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BR2500

SILICON BRIDGERECTIFIERS

New Jersey Semiconductor 

Jeiieu ^zmi-donauckoi L/^ioaucti, Una.

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

USA BR2500-BR2510

TELEPHONE: (973) 376-2922

(212)227-6005

SILICON BRIDGE RECTIFIERS

PRV: 50-1000 Volts

lo : 25 Amperes

BR50

0.728(18.50)1

0.688(17.40)1

FEATURES:

* High current capability

* High surge current capability

* High reliability

* Low reverse current

* Low forward voltage drop

* Rated isolation-voltage 2000 VAC

* Pb / RoHS Free

MECHANICAL DATA:

* Case : Molded plastic with heatsink integrally

mounted in the bridge encapsulation

* Epoxy : UL94V-0 rate flame retardant

* Terminals : plated .25" (6.35 mm). Faston

* Polarity : Polarity symbols marked on case

* Mounting position : Bolt down on heat-sink with

silicone thermal compound between bridge

and mounting surface for maximum heat

transfer efficiency.

* Weight: 17.1 grams

T

0.570(14.50)

0.530(13.40)

—

Jf , f

i ^L-,U i ~ )—~ 1.120(28.40)

n—r ' o.2io(5.30i —

0.658(16.701

'' ' .1 0.200(5.10)

0.618(15.70)

0.032(0.811

0.028(0.71)

0.310(7.871 t 1

0.280(7.11) 1 1

h- H 1*0.252(6.40)

0.248(6.30)

t ^n iQOf2.5Q)

B

IS ——I " 0.090(2.30)

0.826(21.0)

!-,-L-nIT1 1

t— Metal Heats nk

Dimensions in inches anc1 ( millimeters )

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25 °C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

RATING

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Current Tc = 55°C

Peak Forward Surge Current Single half sine wave

Superimposed on rated load (JEDEC Method)

Current Squared Time at t < 8.3 ms.

Maximum Forward Voltage per Diode at IF = 12.5 A

Maximum DC Reverse Current

Ta = 25 °C

at Rated DC Blocking Voltage

Ta = 100 °C

Typical Thermal Resistance (Note 1)

Operating Junction Temperature Range

Storage Temperature Range

SYMBOL BR2500 BR2S01 ! BR2502 BR2504 BR2506 i BR 2508 BR2510 UNIT

VRRM

50

VRMS

35

VDC

50

|F(AV)

100 , 200

400

600 I 800

70

140 : 280 | 420

5 60

100

200

400

600

8 00

25 •

1000

V

700 ' V

1000

V

A

IFSM

300

A

I2t

VF

IR

|R(H)

R6JC

TJ

TSTG

375

1.1

10

200

1,45

- 4 0 to +150

- 40 to + 1 50

A2S

V

uA

uA

°C/W

' ! °C

°C

Notes :

^Thermal Resistance from junction to case with units mountedjir^a 5" x 6" x4.9" (12.8cm.x 15.2cm.x 12.4cm.) Al. -Finned Plate

NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without

notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going

lo press. However, NJ Scmi-C'onductors assumes no responsibility for any errors or omissions discovered in itsuse.

N.I Semi-Conductors encourages customers lo verily that datasheets arc current before placing orders

Quality Semi-Conductors

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