BD441 Просмотр технического описания (PDF) - Foshan Blue Rocket Electronics Co.,Ltd.

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BD441

Silicon NPN transistor in a TO-126F Plastic Package

Foshan Blue Rocket Electronics Co.,Ltd. 

BD441

Rev.E Mar.-2016

极限参数 / Absolute Maximum Ratings(Ta=25℃)

参数

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current - Continuous

Peak Collector Current

Base Current - Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

符号

Symbol

VCBO

VCES

VCEO

VEBO

IC

ICP

IB

PC(Tc=25℃ )

Tj

Tstg

DATA SHEET

数值

Rating

80

80

80

5.0

4.0

7.0

1.0

36

150

-55～150

单位

Unit

V

V

V

V

A

A

A

W

℃

℃

电性能参数 / Electrical Characteristics(Ta=25℃)

参数

Parameter

Collector to Emitter Breakdown

Voltage

Collector to Emitter Breakdown

Voltage

Collector Cut-Off Current

Collector Cut-Off Current

Emitter Cut-Off Current

DC Current Gain

Collector to Emitter Saturation

Voltage

Base to Emitter On Voltage

Transition Frequency

符号

Symbol

VCEO

测试条件

Test Conditions

IC=100mA IB=0

最小值 典型值 最大值 单位

Min Typ Max Unit

80

V

VCES

ICBO

ICES

IEBO

hFE(1)

hFE(2)

hFE(3)

VCE(sat)

VBE(on)(1)

VBE(on)(2)

fT

IC=1.0mA

VCB=80V

VCE=80V

VEB=5.0V

VCE=1.0V

VCE=5.0V

VCE=1.0V

IC=2.0A

VCE=5.0V

VCE=1.0V

VCE=1.0V

RBE=0

IE=0

VBE=0

IC=0

IC=500mA

IC=10mA

IC=2.0A

IB=0.2A

IC=10mA

IC=2.0A

IC=250mA

80

V

100 μA

100 μA

1.0 mA

40 140 475

15 130

15

0.8 V

0.58

V

1.5 V

3.0

MHz

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