RF1K49221(1999) Просмотр технического описания (PDF) - Fairchild Semiconductor
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RF1K49221
(Rev.:1999)
(Rev.:1999)
Fairchild Semiconductor
RF1K49221 Datasheet PDF : 8 Pages
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RF1K49221
Absolute Maximum Ratings TA = 25oC Unless Otherwise Specified
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
Continuous (Pulse Width = 5s). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrostatic Discharge Rating MIL-STD-883, Category B(2) . . . . . . . . . . . . . . . . . . . . . ESD
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
RF1K49221
60
60
±20
2.5
Refer to Peak Current Curve
Refer to UIS Curve
2
0.016
2
-55 to 150
300
260
UNITS
V
V
V
A
W
W/oC
kV
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TA = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate to Source Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
BV DSS
V GS(TH)
I DSS
I GSS
ID = 250µA, VGS = 0V, (Figure 12)
VGS = VDS, ID = 250µA, (Figure 11)
VDS = 60V,
VGS = 0V
TA = 25oC
TA = 150oC
VGS = ±20V, TA = 25oC
VGS = ±10V, TA = 85oC
Drain to Source On Resistance
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
r DS(ON)
t ON
t d(ON)
tr
t d(OFF)
ID = 2.5A,
(Figures 9, 10)
VGS = 10V
VGS = 4.5V
VDD = 30V, ID ≅ 2.5A,
RL = 12Ω, VGS = 10V,
RGS = 25Ω,
(Figure 14)
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Ambient
tf
t OFF
Q g(TOT)
Q g(10)
Q g(TH)
C ISS
C OSS
C RSS
R θ JA
VGS = 0V to 20V
VGS = 0V to 10V
VGS = 0V to 2V
VDD = 48V, ID ≅ 2.5A,
RL = 19.2Ω
Ig(REF) = 1.0mA
(Figure 14)
VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 13)
Pulse Width = 1s
Device mounted on FR-4 material
MIN TYP MAX UNITS
60
-
-
V
1
-
3
V
-
-
1
µA
-
-
50
µA
-
-
10
µA
-
-
25
µA
-
-
0.130
Ω
-
-
0.350
Ω
-
-
50
ns
-
10
-
ns
-
25
-
ns
-
68
-
ns
-
32
-
ns
-
-
150
ns
-
24
29
nC
-
13
16
nC
-
0.8
1.0
nC
-
365
-
pF
-
140
-
pF
-
40
-
pF
-
-
62.5 oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage
Reverse Recovery Time
V SD
t rr
ISD = 2.5A
ISD = 2.5A, dISD/dt = 100A/µs
MIN
TYP
MAX UNITS
-
-
1.25
V
-
-
58
ns
©2001 Fairchild Semiconductor Corporation
RF1K49221 Rev. A
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