UPA1572BH Просмотр технического описания (PDF) - NEC => Renesas Technology
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UPA1572BH Datasheet PDF : 8 Pages
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µPA1572B
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
10
IAS=1A
1.0
EAS=0.1mJ
0.1
VDD = 30 V
VGS = 20 V → 0
RG = 25Ω
Starting TCH=25°C
0.1
10µ
100µ
1m
L - Inductive Load - H
10 m
SINGLE AVALANCHE ENERGY
DERATING FACTOR
100
VDD = 30 V
RG = 25 Ω
80
VGS = 20 V → 0
IAS ≤ 1.0A
60
40
20
0
25
50
75
100 125
150
Starting TCH - Starting Channel Temperature - °C
REFERENCE
Document Name
NEC semiconductor device reliability/quality control system
Quality grade on NEC semiconductor devices
Semiconductor device mounting technology manual
Semiconductor device package manual
Guide to quality assurance for semiconductor devices
Semiconductor selection guide
Power MOS FET features and application switching power supply
Application circuits using Power MOS FET
Safe operating area of Power MOS FET
Document No.
TEI-1202
IEI-1209
C10535E
C10943X
MEI-1202
X10679E
TEA-1034
TEA-1035
TEA-1037
7
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