RMPA2450-58 Просмотр технического описания (PDF) - Raytheon Company
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RMPA2450-58 Datasheet PDF : 5 Pages
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RMPA2450-58
2.4-2.5 GHz GaAs MMIC Power Amplifier
PRODUCT INFORMATION
Description
Features
The Raytheon RMPA2450-58 is a fully monolithic power amplifier in a surface mount package for use in wireless
applications in the 2.4 to 2.5 GHz ISM frequency band. The amplifier may be biased for linear, class AB or class F
for high efficiency applications. On-chip matching components allow operation in a 50-Ohm system with no
external matching components. The MMIC chip design utilizes Raytheon’s 0.25 µm power PHEMT process.
35% Power Added Efficiency
31 dBm Output Power (P1dB) at Vd=+7V
28 dBm Output Power (P1dB) at Vd= +5V
No external RF matching components
Small Package Outline: 0.28” x 0.28” x 0.07”
Thermal Resistance (Channel to Case): 33°C/Watt
Absolute
Maximum
Ratings
Parameter
Positive Drain DC Voltage
Negative Gate DC Voltage
Simultaneous Drain to Gate Voltage
RF Input Power (from 50Ω source)
Drain to Source Current
Gate Current
Channel Temperature
Operating Case Temperature
Storage Temperature Range
Symbol
Vd1,Vd2
Vg1,Vg2
Vd-Vg
PIN
Ids
Ig
Tch
TCase
TStg
Value
+8
-5
+10
+10
575
5
150
-40 to 100
-40 to 125
Unit
Volts
Volts
Volts
dBm
mA
mA
°C
°C
°C
Electrical
Characteristics
(At 25°C,
Zo=50 Ohms,
Unless Otherwise
Noted)
Parameter
Frequency Range
Gain 1, 2, 4
Output Power, P1dB 1,4
Assoc. Power Added
Efficiency
Output Power, P1dB 3
Assoc. Power Added
Efficiency
Min
2400
Typ
2450
30
28
Max Unit
2500 MHz
dB
dBm
35
%
31
dBm
33
%
Parameter
Min
Drain Current (Idd1+Idd2)
Gate Current (Igg1+Igg2)
Input Return Loss (50Ω) 7.5
Typ Max Unit
550 mA
5 mA
dB
www.raytheon.com/micro
Notes:
1. Idq=360 mA, Vd1=Vd2=4.8V
2. Pin= -3 dBm,
3. Vd1=Vd2= +7V
4. Production Testing includes Gain, Output Power (P1dB) and Input Return Loss at Vd1=Vd2=4.8V, Vg1=Vg2= -0.5V (nominal) , adjusted for
Idq=360 mA, Pin= -3 dBm and at F=2.45 GHz. Other Parameters are guaranteed by Design Validation Testing.
Characteristic performance data and specifications are subject to change without notice.
Revised March 30, 2000
Page 1
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
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