HVM14SR Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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HVM14SR

Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator

Hitachi -> Renesas Electronics 

HVM14SR

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Reverse voltage

VR

Forward current

IF

Power dissipation

Pd *1

Junction temperature

Tj

Storage temperature

Tstg

Note: 1. Two device total.

Value

Unit

50

V

50

mA

100

mW

125

°C

-55to+125

°C

Electrical Characteristics (Ta = 25°C) *2

Item

Symbol Min Typ Max Unit

Forward voltage

VF

Reverse current

IR

Capacitance

C

  1.0 V

  100 nA

 0.25  pF

Forward resistance r f

ESD-Capability *1 

 7

Ω

200   V

Note: 1. Failure criterion ; IR ≥ 200nA at VR =50 V

Note: 2. Per one device.

Test Condition

IF = 50 mA

VR = 50V

VR = 50V, f = 1 MHz

IF = 10 mA, f = 100 MHz

C=200pF, Both forward and reverse direction

1 pulse

2

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