HVM14S Просмотр технического описания (PDF) - Renesas Electronics

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HVM14S

Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator

Renesas Electronics 

HVM14S

Absolute Maximum Ratings *1

(Ta = 25°C)

Item

Symbol

Value

Unit

Reverse voltage

VR

50

V

Forward current

IF

50

mA

Power dissipation

Pd

100

mW

Junction temperature

Tj

125

°C

Storage temperature

Tstg

–55 to +125

°C

Note: 1. Absolute maximum ratings are described each unit separately.

Electrical Characteristics *1

(Ta = 25°C)

Item

Symbol Min

Forward voltage

VF

—

Reverse current

IR

—

Capacitance

C

—

Forward resistance rf

—

ESD-Capability *2 —

200

Typ Max

—

1.0

—

100

0.25 —

—

7.0

—

—

Notes: 1. Per one device.

2. Failure criterion; IR ≥ 200 nA at VR = 50 V

Unit

V

nA

pF

Ω

V

Test Condition

IF = 50 mA

VR = 50 V

VR = 50 V, f = 1 MHz

IF = 10 mA, f = 100 MHz

C = 200 pF, Both forward and reverse

direction 1 pulse.

Rev.5.00, Oct.08.2003, page 2 of 4

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